Fabrication method for horizontal direction semiconductor PN junction array | |
MIN, SUK-KI; KIM, SEONG-IL; KIM, EUN KYU | |
1999-03-16 | |
著作权人 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
专利号 | US5882950 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Fabrication method for horizontal direction semiconductor PN junction array |
英文摘要 | A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl4 or CBr4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl4 or CBr4 . |
公开日期 | 1999-03-16 |
申请日期 | 1996-12-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/40117] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
推荐引用方式 GB/T 7714 | MIN, SUK-KI,KIM, SEONG-IL,KIM, EUN KYU. Fabrication method for horizontal direction semiconductor PN junction array. US5882950. 1999-03-16. |
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