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	Method of measuring doping characteristic of compound semiconductor in real time
	BAEK, JONG-HYEOB; LEE, BUN; LEE, JIN-HONG; CHOI, SUNG-WOO
	1998-01-06
著作权人	INTELLECTUAL DISCOVERY CO. LTD.
专利号	US5705403
国家	美国
文献子类	授权发明
其他题名	Method of measuring doping characteristic of compound semiconductor in real time
英文摘要	A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.
公开日期	1998-01-06
申请日期	1996-08-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40115]
专题	半导体激光器专利数据库
作者单位	INTELLECTUAL DISCOVERY CO. LTD.
推荐引用方式 GB/T 7714	BAEK, JONG-HYEOB,LEE, BUN,LEE, JIN-HONG,et al. Method of measuring doping characteristic of compound semiconductor in real time. US5705403. 1998-01-06.

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