| Germanium doped gaas devices | |
| - | |
| 1977-07-06 | |
| 著作权人 | WESTERN ELECTRIC CO INC |
| 专利号 | GB1479154A |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Germanium doped gaas devices |
| 英文摘要 | 1479154 Lasers; ohmically contacting semiconductor devices WESTERN ELECTRIC CO Inc 3 Dec 1974 [3 Dec 1973] 52162/74 Headings H1C and H1K [Also in Division C4] A semiconductor device is made by contacting at a temperature of 700-850 C. a body consisting of one or more A 111 B v compounds with a solution comprising gallium, gallium arsenide and 20-50 atomic per cent germanium, reducing the temperature of the liquid-solid interface by at least 0À5 C. to epitaxially deposit a P type layer with a carrier concentration of at least 3À5 x 1019/cc and applying a metal layer to the P type layer to form an ohmic contact therewith. Deposition preferably starts at 800 C. and is continued to provide a layer 0À5-25Á thick on which a composite electrode layer of chromium or titanium overlain with gold is conventionally deposited. A method of constructiong a heterojunction laser on a (100) oriented N + GaAs substrate is described using four different solutions to provide intermediate layers of GaAlAs and finally the P type contact layer. |
| 公开日期 | 1977-07-06 |
| 申请日期 | 1974-12-03 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40098]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WESTERN ELECTRIC CO INC |
| 推荐引用方式 GB/T 7714 | -. Germanium doped gaas devices. GB1479154A. 1977-07-06. |
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