| Quantum well optical device on silicon | |
| BEHFAR-RAD, ABBAS | |
| 1991-12-24 | |
| 著作权人 | CORNELL RESEARCH FOUNDATION, INC. |
| 专利号 | US5075743 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum well optical device on silicon |
| 英文摘要 | A semiconductor structure for use in forming optical devices, such as lasers and LEDs, is disclosed. The structure includes a silicon base on which is formed by epitaxial growth, a crystalline material (such as AlGaP) structure or region that is nearly lattice matched to silicon. One or more quantum wells are formed in the crystalline material structure. A quantum well can be made of a direct bandgap material or an indirect bandgap material with isoelectronic centers (IECs). The regions on either side of the quantum wells can be graded to form a graded index separate confinement heterostructure (GRINSCH). To reduce problems of warpage, the crystalline material can be epitaxially grown in windows formed in a layer of silicon nitride or silicon dioxide on the silicon substrate. A multi-color array of optical devices can be provided with this structure. |
| 公开日期 | 1991-12-24 |
| 申请日期 | 1989-06-06 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39777]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CORNELL RESEARCH FOUNDATION, INC. |
| 推荐引用方式 GB/T 7714 | BEHFAR-RAD, ABBAS. Quantum well optical device on silicon. US5075743. 1991-12-24. |
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