QQ客服 官方微博 反馈留言

	エッチング方法
	林 伸彦
	1997-04-18
著作权人	三洋電機株式会社
专利号	JP2627292B2
国家	日本
文献子类	授权发明
其他题名	エッチング方法
英文摘要	PURPOSE:To remove a layer positioned onto the top face of a ridge section selectively through etching without using a photolithographic technique requiring mask alignment, by applying a resist film onto the surface of layer except the surface of layer positioned just above a corner section on the upper side of the ridge section, and dipping the surface side of the substrate in an etchant. CONSTITUTION:SiO2 7a is applied onto the whole surfaces of the surfaces of a ridge section 6 and a second clad layer 4 through a CVD method, etc. Resist films 11 are applied onto the surfaces of SiO2 7a except sections just above corner sections 6a, 6b on the upper side of the ridge section 6. The surface side to which at least the resist films 11 are formed is dipped in a buffer hydrofluoric acid solution. Consequently, etching is started form the surfaces of SiO2 7a exposed to sections just above the corner sections 6a, 6b on the upper side of the ridge section 6. SiO2 7a positioned onto the top face of the ridge section 6 is etched gradually with the elapse of time, and lastly all of SiO2 7a on the top face of the ridge section are removed. The resist film 11 remaining on the surface of SiO2 7a is gotten rid of after such etching, thus acquiring a specified insulating film 7.
公开日期	1997-07-02
申请日期	1988-02-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39768]
专题	半导体激光器专利数据库
作者单位	三洋電機株式会社
推荐引用方式 GB/T 7714	林 伸彦. エッチング方法. JP2627292B2. 1997-04-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。