Very short wavelength semiconductor laser | |
TANAKA, TOSHIAKI | |
1994-07-19 | |
著作权人 | HITACHI, LTD. |
专利号 | US5331656 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Very short wavelength semiconductor laser |
英文摘要 | A laser device, for example, a diode, is provided which has an oscillation wavelength shorter than 600 nm by using III-V semiconductor materials. This is achieved by using nitrogen doping with GaInP material on a GaP substrate to increase the critical layer thickness of the strained layer. As one example, the following layers can be epitaxially-grown in order on an n-type GaP substrate 1 by a molecular beam epitaxy (MBE) method: a Si-doped n-type AlyGal-yP optical waveguide layer; a multiple quantum well layer made by repeatedly forming four nitrogen-doped Gax1In1-x1P quantum barrier layers and three nitrogen-doped Gax2In1-x2P quantum well layers; a Zn-doped p-type AlyGa1-yP optical waveguide layer; a Zn-doped p-type Gax3In1-x3P thin layer; and a Zn-doped p-type AlyGa1-yP optical waveguide layer. Next, the thin Gax3In1-x3P layer is processed to form a ridge stripe. Then, an n-type Gap current constriction layer is selectively grown and a p-electrode and an n-electrode are formed. Using such a structure, it is possible to obtain a yellow laser element having a threshold current of 100 to 150 mA and an oscillation wavelength of 565 to 580 nm controlled in the transverse mode under continuous-wave (CW) room-temperature operation. Other embodiments use either a single quantum well layer or superlattice layers to obtain either yellow-green light or orange light of very short wavelengths. |
公开日期 | 1994-07-19 |
申请日期 | 1993-07-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/39416] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI, LTD. |
推荐引用方式 GB/T 7714 | TANAKA, TOSHIAKI. Very short wavelength semiconductor laser. US5331656. 1994-07-19. |
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