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	半導体波長可変装置
	曲 克明; 野口 悦男; 岡本 稔; 三上 修
	1999-04-02
著作权人	日本電信電話株式会社
专利号	JP2907234B2
国家	日本
文献子类	授权发明
其他题名	半導体波長可変装置
英文摘要	PURPOSE:To obtain a semiconductor wavelength varying device having a wide continuous wavelength sweeping width by forming a waveguide including a diffraction grating in a stripe state, and continuously bending the waveguide in a direction where the light travels. CONSTITUTION:An n-type InGaAsP optical guide layer 2, an undoped MQW active layer 3 and a p-type InGaAsP optical guide layer 4 are continuously grown on an n-type InP substrate 1 by a liquid growing method. Then, after an uneven diffraction grating 20 is formed on the layer 4, a p-type InP clad layer 5 and a p-type InGaAsP electrode layer 6 are continuously grown. Thereafter, after a thin SiO2 film is formed on the entire surface by a sputtering method, the thin film is formed in a curved stripe state by photoetching. Subsequently, with the thin film as a mask it is etched until it reaches the substrate 1, and a p-type InP layer 7 and an n-type InP layer 8 are formed. Then a p-type ohmic electrode 9 is formed on the entire surface, a groove 11 is formed by reactive ion etching, and a waveguide G is buried therein.
公开日期	1999-06-21
申请日期	1990-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39257]
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	曲 克明,野口 悦男,岡本 稔,等. 半導体波長可変装置. JP2907234B2. 1999-04-02.

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