QQ客服 官方微博 反馈留言

	Titanium nitride diffusion barrier for use in non-silicon technologies and method
	DAETWYLER, ANDREAS; DEUTSCH, URS; HARDER, CHRISTOPH; HEUBERGER, WILHELM; LATTA, EBERHARD; JAKUBOWICZ, ABRAM; OOSENBRUG, ALBERTUS; PATRICK, WILLIAM; ROENTGEN, PETER; WILLIAMS, ERICA
	2001-03-20
著作权人	NORTEL NETWORKS UK LIMITED
专利号	US6204560
国家	美国
文献子类	授权发明
其他题名	Titanium nitride diffusion barrier for use in non-silicon technologies and method
英文摘要	As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.
公开日期	2001-03-20
申请日期	1998-04-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39195]
专题	半导体激光器专利数据库
作者单位	NORTEL NETWORKS UK LIMITED
推荐引用方式 GB/T 7714	DAETWYLER, ANDREAS,DEUTSCH, URS,HARDER, CHRISTOPH,et al. Titanium nitride diffusion barrier for use in non-silicon technologies and method. US6204560. 2001-03-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。