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	Passivation of semiconductor laser facets
	HU, MARTIN HAI; KINNEY, LYLE D.; ONYIRIUKA, EMMANNUEL C.; OUYANG, MIKE X.; ZAH, CHUNG-EN
	2003-09-09
著作权人	THORLABS QUANTUM ELECTRONICS, INC.
专利号	US6618409
国家	美国
文献子类	授权发明
其他题名	Passivation of semiconductor laser facets
英文摘要	A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple laser bars. The bars are placed into a vacuum processing chamber in which two steps are performed without breaking vacuum. The first step includes cleaning the facets including removing the native oxide by, for example, a low-energy ion beam or by an electron cyclotron resonance (EAR) plasma containing hydrogen and possibly argon or xenon with the bars being negatively biased. The second step includes coating the cleaned facets with a thin passivation layer of hydrogenated amorphous silicon (a-Si:H), whereby the facets are coating by the passivation layer without an intervening oxide. A low oxygen partial pressure of no more than 10-8 Torr is maintained between the cleaning and deposition, both of which preferably are done in the same chamber. Also preferably, anti-reflective or highly reflective coatings are deposited on the facets without returning the laser bars to air.
公开日期	2003-09-09
申请日期	2000-05-03
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38965]
专题	半导体激光器专利数据库
作者单位	THORLABS QUANTUM ELECTRONICS, INC.
推荐引用方式 GB/T 7714	HU, MARTIN HAI,KINNEY, LYLE D.,ONYIRIUKA, EMMANNUEL C.,et al. Passivation of semiconductor laser facets. US6618409. 2003-09-09.

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