| 単一軸モード半導体レーザ | |
| 水戸 郁夫; 山口 昌幸 | |
| 1994-09-14 | |
| 著作权人 | NIPPON DENKI KK |
| 专利号 | JP1994073388B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 単一軸モード半導体レーザ |
| 英文摘要 | PURPOSE:To increase the photo output by improvement of a Fabry-Perot inhibition structure by a method wherein both end surfaces are formed by cleavage, and a reflection-preventing film is formed at least on one end surface of a thickness about (m/2-1/4) times the oscillation wavelength in said film. CONSTITUTION:A diffraction lattice 100 of 1,500Angstrom depth repeating at the period of 4,000Angstrom is formed on an N type InP substrate 1 over the entire surface. An N type InGaAsP optical guide layer 2, a non-doped InGaAsP active layer 3, and a P type InP clad layer 4 are laminated thereon. Next, two grooves 51 and 52 are formed, and a mesa stripe 50 containing the active layer 3 is formed by being sandwiched thereby. Then, a P type InP current block layer 5, an N type InP current confinement layer 6, a P type InP buried layer 7, and a P type InGaAsP cap layer 8 are laminated. After an SiO2 film 60 is formed, the part above the mesa stripe is removed in the shape of a stripe 30, and Ti/Pt/Au films are successively evaporated thereon into the P-side electrode 20. |
| 公开日期 | 1994-09-14 |
| 申请日期 | 1983-11-04 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | 水戸 郁夫,山口 昌幸. 単一軸モード半導体レーザ. JP1994073388B2. 1994-09-14. |
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