| 歪量子井戸型半導体レーザ | |
| 石川 信 | |
| 1998-12-11 | |
| 著作权人 | 日本電気株式会社 |
| 专利号 | JP2861166B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 歪量子井戸型半導体レーザ |
| 英文摘要 | PURPOSE:To form a 0.98mum-band strain quantum well semiconductor laser having a high output and high reliability by providing an AlGaAs clad layer, an active layer having an SCH structure, and an AlyGa1-yAs clad layer on a GaAs substrate, and laminating In0.5Ga0.5P on the clad layers on both sides of a mesa unit. CONSTITUTION:An n-type Al0.3Ga0.7As clad layer 2, an active layer 3 having an InGaAs/GaAs-SCH structure, a P-type AlyGal-yAs clad layer 4 and a p-type GaAs cap layer 5 are sequentially laminated on an n-type GaAs substrate Then, with an SiO2 as a mask a mesa is formed in the layer 4 by phosphoric acid wet etching, and an n-type In0.5Ga0.5P buried layer 6 is selectively formed at a mesa side. y<0.38 is set, and the refractive index of the mesa unit is increased larger than the value of the layer 6 of the mesa side. |
| 公开日期 | 1999-02-24 |
| 申请日期 | 1989-12-22 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 石川 信. 歪量子井戸型半導体レーザ. JP2861166B2. 1998-12-11. |
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