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	Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method
	YAMAMOTO, TSUYOSHI; SUDO, HISAO
	2014-05-06
著作权人	FUJITSU LIMITED
专利号	US8716044
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method
英文摘要	A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.
公开日期	2014-05-06
申请日期	2013-09-16
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38635]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	YAMAMOTO, TSUYOSHI,SUDO, HISAO. Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method. US8716044. 2014-05-06.

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