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	Flip-chip light emitting diodes and method of manufacturing thereof
	SEONG, TAE-YEON; SONG, JUNE-O; KIM, KYOUNG-KOOK; HONG, WOONG-KI
	2012-06-19
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US8202751
国家	美国
文献子类	授权发明
其他题名	Flip-chip light emitting diodes and method of manufacturing thereof
英文摘要	Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
公开日期	2012-06-19
申请日期	2010-12-01
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38537]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	SEONG, TAE-YEON,SONG, JUNE-O,KIM, KYOUNG-KOOK,et al. Flip-chip light emitting diodes and method of manufacturing thereof. US8202751. 2012-06-19.

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