| Laser diode and method for fabricating same | |
| CHAKRABORTY, ARPAN; HANSEN, MONICA; DENBAARS, STEVEN; NAKAMURA, SHUJI; BRANDES, GEORGE | |
| 2014-03-25 | |
| 著作权人 | CREE, INC. |
| 专利号 | US8679876 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode and method for fabricating same |
| 英文摘要 | A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation. |
| 公开日期 | 2014-03-25 |
| 申请日期 | 2010-06-29 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38524]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | CHAKRABORTY, ARPAN,HANSEN, MONICA,DENBAARS, STEVEN,et al. Laser diode and method for fabricating same. US8679876. 2014-03-25. |
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