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	Bottom emitting vertical-cavity surface-emitting lasers
	MATHAI, SAGI VARGHESE; CHEUNG, STANLEY; SORIN, WAYNE V.; TAN, MICHAEL RENNE TY
	2019-05-14
著作权人	HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
专利号	US10290996
国家	美国
文献子类	授权发明
其他题名	Bottom emitting vertical-cavity surface-emitting lasers
英文摘要	A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.
公开日期	2019-05-14
申请日期	2018-04-25
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38470]
专题	半导体激光器专利数据库
作者单位	HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
推荐引用方式 GB/T 7714	MATHAI, SAGI VARGHESE,CHEUNG, STANLEY,SORIN, WAYNE V.,et al. Bottom emitting vertical-cavity surface-emitting lasers. US10290996. 2019-05-14.

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