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	Method for manufacturing photoelectric conversion device
	YAMAZAKI, SHUNPEI; ARAI, YASUYUKI
	2012-06-26
著作权人	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
专利号	US8207010
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing photoelectric conversion device
英文摘要	It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.
公开日期	2012-06-26
申请日期	2008-05-23
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38461]
专题	半导体激光器专利数据库
作者单位	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式 GB/T 7714	YAMAZAKI, SHUNPEI,ARAI, YASUYUKI. Method for manufacturing photoelectric conversion device. US8207010. 2012-06-26.

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