Monolithically-pumped erbium-doped waveguide amplifiers and lasers | |
HALL, DOUGLAS; HUANG, MINGJUN | |
2010-02-02 | |
著作权人 | UNIVERSITY OF NOTRE DAME DU LAC, THE |
专利号 | US7655489 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Monolithically-pumped erbium-doped waveguide amplifiers and lasers |
英文摘要 | Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide. |
公开日期 | 2010-02-02 |
申请日期 | 2008-05-19 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/38459] |
专题 | 半导体激光器专利数据库 |
作者单位 | UNIVERSITY OF NOTRE DAME DU LAC, THE |
推荐引用方式 GB/T 7714 | HALL, DOUGLAS,HUANG, MINGJUN. Monolithically-pumped erbium-doped waveguide amplifiers and lasers. US7655489. 2010-02-02. |
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