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	Light emitting diode, optoelectronic device and method of fabricating the same
	KUO, CHENG-HUANG; LAI, WEI-CHIH; KUO, CHI-WEN
	2010-11-16
著作权人	NATIONAL CENTRAL UNIVERSITY
专利号	US7833809
国家	美国
文献子类	授权发明
其他题名	Light emitting diode, optoelectronic device and method of fabricating the same
英文摘要	A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.
公开日期	2010-11-16
申请日期	2008-05-09
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38456]
专题	半导体激光器专利数据库
作者单位	NATIONAL CENTRAL UNIVERSITY
推荐引用方式 GB/T 7714	KUO, CHENG-HUANG,LAI, WEI-CHIH,KUO, CHI-WEN. Light emitting diode, optoelectronic device and method of fabricating the same. US7833809. 2010-11-16.

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