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	Nitride-based semiconductor light emitting device and method of manufacturing the same
	YOON, SUK-HO; JIN, SUNG-HO; KIM, KYOUNG-KOOK; LEE, JEONG-WOOK
	2011-01-18
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US7871845
国家	美国
文献子类	授权发明
其他题名	Nitride-based semiconductor light emitting device and method of manufacturing the same
英文摘要	Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.
公开日期	2011-01-18
申请日期	2007-06-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38362]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	YOON, SUK-HO,JIN, SUNG-HO,KIM, KYOUNG-KOOK,et al. Nitride-based semiconductor light emitting device and method of manufacturing the same. US7871845. 2011-01-18.

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