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	Integrated optoelectronic device and method of fabricating the same
	SHINODA, KAZUNORI; SHIOTA, TAKASHI; TSUCHIYA, TOMONOBU; KITATANI, TAKESHI; AOKI, MASAHIRO
	2008-03-04
著作权人	LUMENTUM JAPAN, INC.
专利号	US7340142
国家	美国
文献子类	授权发明
其他题名	Integrated optoelectronic device and method of fabricating the same
英文摘要	An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
公开日期	2008-03-04
申请日期	2007-02-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38334]
专题	半导体激光器专利数据库
作者单位	LUMENTUM JAPAN, INC.
推荐引用方式 GB/T 7714	SHINODA, KAZUNORI,SHIOTA, TAKASHI,TSUCHIYA, TOMONOBU,et al. Integrated optoelectronic device and method of fabricating the same. US7340142. 2008-03-04.

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