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	Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element
	OKUYAMA, HIROYUKI
	2008-11-18
著作权人	SONY CORPORATION
专利号	US7452789
国家	美国
文献子类	授权发明
其他题名	Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element
英文摘要	A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the sapphire substrate. The method for forming an underlayer composed of a GaN-based compound semiconductor includes the steps of forming strip seed layers composed of a GaN-based compound semiconductor on the surface of a sapphire substrate, forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on the top surfaces and both the side surfaces of the seed layers, and on the exposed surfaces of the sapphire substrate, and epitaxially growing an underlayer composed of a GaN-based compound semiconductor from the parts of the crystal growth promoting layer.
公开日期	2008-11-18
申请日期	2007-01-05
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38326]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	OKUYAMA, HIROYUKI. Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element. US7452789. 2008-11-18.

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