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	Quantum dot laser diode and method of manufacturing the same
	KIM, JIN SOO; LEE, JIN HONG; HONG, SUNG UI; KWACK, HO SANG; CHOI, BYUNG SEOK; OH, DAE KON
	2009-08-18
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US7575943
国家	美国
文献子类	授权发明
其他题名	Quantum dot laser diode and method of manufacturing the same
英文摘要	Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
公开日期	2009-08-18
申请日期	2006-12-01
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38319]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	KIM, JIN SOO,LEE, JIN HONG,HONG, SUNG UI,et al. Quantum dot laser diode and method of manufacturing the same. US7575943. 2009-08-18.

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