QQ客服 官方微博 反馈留言

	In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
	HUFFAKER, DIANA L.; BIRODAVOLU, SANDY
	2007-10-30
著作权人	STC.UNM
专利号	US7288423
国家	美国
文献子类	授权发明
其他题名	In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
英文摘要	A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first layer can then be removed using a wet chemical etch to form a mask. After removing the patterned photoresist a second layer can be epitaxially grown in a metal organic chemical vapor deposition (MOCVD) chamber or a chemical beam epitaxy (CBE) chamber on a portion of the first layer exposed by the mask. The mask can then be removed the mask in the MOCVD/MBE chamber. The disclosed in-situ mask removal method minimizes both the atmospheric exposure of a growth surface and the number of sample transfers.
公开日期	2007-10-30
申请日期	2006-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38287]
专题	半导体激光器专利数据库
作者单位	STC.UNM
推荐引用方式 GB/T 7714	HUFFAKER, DIANA L.,BIRODAVOLU, SANDY. In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition. US7288423. 2007-10-30.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。