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	Method of manufacturing semiconductor light emitting device
	CHIBA, MARI; KUDO, HISASHI; AGATSUMA, SHINICHI
	2007-04-24
著作权人	SONY CORPORATION
专利号	US7208338
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing semiconductor light emitting device
英文摘要	A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate; a process of forming a ridge groove for forming a ridge; and a process of forming a current-flow barrier layer in the ridge groove. The process of forming ridge grooves has first and second anisotropic etching processes of performing anisotropic etching, an etching-mask forming process, and an isotropic etching process of performing anisotropic etching.
公开日期	2007-04-24
申请日期	2004-12-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38239]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	CHIBA, MARI,KUDO, HISASHI,AGATSUMA, SHINICHI. Method of manufacturing semiconductor light emitting device. US7208338. 2007-04-24.

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