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	Using scatterometry to detect and control undercut for ARC with developable BARCs
	SUBRAMANIAN, RAMKUMAR; SINGH, BHANWAR; PHAN, KHOI A.
	2005-12-06
著作权人	GLOBALFOUNDRIES INC.
专利号	US6972201
国家	美国
文献子类	授权发明
其他题名	Using scatterometry to detect and control undercut for ARC with developable BARCs
英文摘要	Architecture for monitoring a bottom anti-reflective coating (BARC) undercut and residual portions thereof during a development stage using scatterometry. The scatterometry system monitors for BARC undercut and residual BARC material, and if detected, controls the process to minimize such effects in subsequent wafers. If one or more of such effects has exceeded a predetermined limit, the wafer is rerouted for further processing, which can include rework, etch back of the affected layer, or rejection of the wafer, for example.
公开日期	2005-12-06
申请日期	2004-01-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38195]
专题	半导体激光器专利数据库
作者单位	GLOBALFOUNDRIES INC.
推荐引用方式 GB/T 7714	SUBRAMANIAN, RAMKUMAR,SINGH, BHANWAR,PHAN, KHOI A.. Using scatterometry to detect and control undercut for ARC with developable BARCs. US6972201. 2005-12-06.

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