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	Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
	WHITE, HENRY W.; RYU, YUNGRYEL; LEE, TAE-SEOK
	2010-11-02
著作权人	MOXTRONICS, INC.
专利号	US7824955
国家	美国
文献子类	授权发明
其他题名	Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
英文摘要	A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.
公开日期	2010-11-02
申请日期	2003-08-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38173]
专题	半导体激光器专利数据库
作者单位	MOXTRONICS, INC.
推荐引用方式 GB/T 7714	WHITE, HENRY W.,RYU, YUNGRYEL,LEE, TAE-SEOK. Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices. US7824955. 2010-11-02.

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