Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices | |
WHITE, HENRY W.; RYU, YUNGRYEL; LEE, TAE-SEOK | |
2010-11-02 | |
著作权人 | MOXTRONICS, INC. |
专利号 | US7824955 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices |
英文摘要 | A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films. |
公开日期 | 2010-11-02 |
申请日期 | 2003-08-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/38173] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MOXTRONICS, INC. |
推荐引用方式 GB/T 7714 | WHITE, HENRY W.,RYU, YUNGRYEL,LEE, TAE-SEOK. Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices. US7824955. 2010-11-02. |
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