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	Dislocation reduction in non-polar gallium nitride thin films
	CRAVEN, MICHAEL D.; DENBAARS, STEVEN P.; SPECK, JAMES STEPHEN
	2005-05-31
著作权人	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
专利号	US6900070
国家	美国
文献子类	授权发明
其他题名	Dislocation reduction in non-polar gallium nitride thin films
英文摘要	Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
公开日期	2005-05-31
申请日期	2003-04-15
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38153]
专题	半导体激光器专利数据库
作者单位	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
推荐引用方式 GB/T 7714	CRAVEN, MICHAEL D.,DENBAARS, STEVEN P.,SPECK, JAMES STEPHEN. Dislocation reduction in non-polar gallium nitride thin films. US6900070. 2005-05-31.

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