Dislocation reduction in non-polar gallium nitride thin films | |
CRAVEN, MICHAEL D.; DENBAARS, STEVEN P.; SPECK, JAMES STEPHEN | |
2005-05-31 | |
著作权人 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
专利号 | US6900070 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Dislocation reduction in non-polar gallium nitride thin films |
英文摘要 | Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth. |
公开日期 | 2005-05-31 |
申请日期 | 2003-04-15 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/38153] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
推荐引用方式 GB/T 7714 | CRAVEN, MICHAEL D.,DENBAARS, STEVEN P.,SPECK, JAMES STEPHEN. Dislocation reduction in non-polar gallium nitride thin films. US6900070. 2005-05-31. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论