| Inverse diode stack | |
| ETTINGSHAUSEN, FRANK; SPANN, THOMAS; WISOTZKI, ELMAR | |
| 2018-04-10 | |
| 著作权人 | LITTELFUSE, INC. |
| 专利号 | US9941256 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Inverse diode stack |
| 英文摘要 | A packaged inverse diode device exhibits superior commutation robustness. The device includes a stack of inverse diodes disposed within a housing. Each adjacent pair of inverse diodes is bonded together by an intervening DMB (Direct Metal Bonded) substrate structure. At one end of the stack of diode dice and DMB substrate structures is attached a first metal terminal. A second metal terminal is attached to the other end of the stack. The two terminals serve as package terminals of the overall device. In a novel method, the device undergoes severe commutation. A large forward current is made to flow through the diode stack, followed by a rapid reversal of the voltage across the stack to a large reverse polarity voltage. Despite a substantial rate of change of the commutation current at the onset of the reverse voltage condition, the inverse diode device is not damaged. |
| 公开日期 | 2018-04-10 |
| 申请日期 | 2016-12-21 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37949]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LITTELFUSE, INC. |
| 推荐引用方式 GB/T 7714 | ETTINGSHAUSEN, FRANK,SPANN, THOMAS,WISOTZKI, ELMAR. Inverse diode stack. US9941256. 2018-04-10. |
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