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	Discontinuous patterned bonds for semiconductor devices and associated systems and methods
	SCHELLHAMMER, SCOTT, D.; ODNOBLYUDOV, VLADIMIR; FREI, JEREMY, S.
	2018-05-16
著作权人	MICRON TECHNOLOGY, INC.
专利号	EP2751831B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Discontinuous patterned bonds for semiconductor devices and associated systems and methods
英文摘要	Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
公开日期	2018-05-16
申请日期	2012-08-14
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37601]
专题	半导体激光器专利数据库
作者单位	MICRON TECHNOLOGY, INC.
推荐引用方式 GB/T 7714	SCHELLHAMMER, SCOTT, D.,ODNOBLYUDOV, VLADIMIR,FREI, JEREMY, S.. Discontinuous patterned bonds for semiconductor devices and associated systems and methods. EP2751831B1. 2018-05-16.

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