Methods and structures for forming integrated semiconductor structures | |
SADAKA, MARIAM; IONUT, RADU | |
2015-05-19 | |
著作权人 | SOITEC |
专利号 | US9034727 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Methods and structures for forming integrated semiconductor structures |
英文摘要 | The invention provides methods and structures for fabricating a semiconductor structure and particularly for forming a semiconductor structure with improved planarity for achieving a bonded semiconductor structure comprising a processed semiconductor structure and a number of bonded semiconductor layers. Methods for forming semiconductor structures include forming a dielectric layer over a non-planar surface of a processed semiconductor structure, planarizing a surface of the dielectric layer on a side thereof opposite the processed semiconductor structure, and attaching a semiconductor structure to the planarized surface of the dielectric layer. Semiconductor structures include a dielectric layer overlaying a non-planar surface of a processed semiconductor structure, and a masking layer overlaying the dielectric layer on a side thereof opposite the processed semiconductor structure. The masking layer includes a plurality of mask openings over conductive regions of the non-planar surface of the processed semiconductor structure. |
公开日期 | 2015-05-19 |
申请日期 | 2011-01-04 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/37491] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SOITEC |
推荐引用方式 GB/T 7714 | SADAKA, MARIAM,IONUT, RADU. Methods and structures for forming integrated semiconductor structures. US9034727. 2015-05-19. |
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