QQ客服 官方微博 反馈留言

	Methods and structures for forming integrated semiconductor structures
	SADAKA, MARIAM; IONUT, RADU
	2015-05-19
著作权人	SOITEC
专利号	US9034727
国家	美国
文献子类	授权发明
其他题名	Methods and structures for forming integrated semiconductor structures
英文摘要	The invention provides methods and structures for fabricating a semiconductor structure and particularly for forming a semiconductor structure with improved planarity for achieving a bonded semiconductor structure comprising a processed semiconductor structure and a number of bonded semiconductor layers. Methods for forming semiconductor structures include forming a dielectric layer over a non-planar surface of a processed semiconductor structure, planarizing a surface of the dielectric layer on a side thereof opposite the processed semiconductor structure, and attaching a semiconductor structure to the planarized surface of the dielectric layer. Semiconductor structures include a dielectric layer overlaying a non-planar surface of a processed semiconductor structure, and a masking layer overlaying the dielectric layer on a side thereof opposite the processed semiconductor structure. The masking layer includes a plurality of mask openings over conductive regions of the non-planar surface of the processed semiconductor structure.
公开日期	2015-05-19
申请日期	2011-01-04
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37491]
专题	半导体激光器专利数据库
作者单位	SOITEC
推荐引用方式 GB/T 7714	SADAKA, MARIAM,IONUT, RADU. Methods and structures for forming integrated semiconductor structures. US9034727. 2015-05-19.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。