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	Integrated tapered diode laser arrangement and method for producing it
	EBERHARD, FRANZ; SCHLERETH, THOMAS; SCHMID, WOLFGANG
	2011-02-08
著作权人	OSRAM OPTO SEMICONDUCTORS GMBH
专利号	US7885302
国家	美国
文献子类	授权发明
其他题名	Integrated tapered diode laser arrangement and method for producing it
英文摘要	An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.
公开日期	2011-02-08
申请日期	2008-02-27
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37365]
专题	半导体激光器专利数据库
作者单位	OSRAM OPTO SEMICONDUCTORS GMBH
推荐引用方式 GB/T 7714	EBERHARD, FRANZ,SCHLERETH, THOMAS,SCHMID, WOLFGANG. Integrated tapered diode laser arrangement and method for producing it. US7885302. 2011-02-08.

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