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	Semiconductor radiation coupling system
	EVANS, GARY A.; KIRK, JAY B.
	1990-04-24
著作权人	GENERAL ELECTRIC COMPANY, A CORP. OF NY
专利号	US4919507
国家	美国
文献子类	授权发明
其他题名	Semiconductor radiation coupling system
英文摘要	A first array of laser diode devices are optically coupled by a diffraction grating comprising a plurality of spaced diffraction nodules in a grid array optically coupled to the devices. The light emitted from a device of the first array can pass through the grid array to a second device, reflect back to the emitting device in a Distributed Bragg Reflector (DBR) mode and deflect orthogonal to the emitted light optical axis to a third device in a Distributed Bragg Deflector (DBD) mode. The light from the second and third devices can be coupled to other laser diode devices by still further diffraction nodule arrays to produce phased-locked beams; beam steering of portions of the light and other effects.
公开日期	1990-04-24
申请日期	1989-05-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35928]
专题	半导体激光器专利数据库
作者单位	GENERAL ELECTRIC COMPANY, A CORP. OF NY
推荐引用方式 GB/T 7714	EVANS, GARY A.,KIRK, JAY B.. Semiconductor radiation coupling system. US4919507. 1990-04-24.

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