Hybrid semiconductor lasers
DONG, PO; CHEN, YOUNG-KAI
2018-10-09
著作权人ALCATEL-LUCENT USA INC.
专利号US10096971
国家美国
文献子类授权发明
其他题名Hybrid semiconductor lasers
英文摘要Various exemplary embodiments relate to an apparatus including: a first substrate including a planar dielectric layer on a semiconducting layer, and a silicon layer located directly on a planar surface of the dielectric layer, adjacent first and second segments of the silicon layer being optically end-coupled, the first segment being thicker than the second segment; and a second substrate including a III-V semiconductor layer segment on a top surface thereof, the first and second substrates being bonded together such that the III-V semiconductor layer segment is in direct contact with a portion of the first segment of the silicon layer.
公开日期2018-10-09
申请日期2014-06-26
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/35647]  
专题半导体激光器专利数据库
作者单位ALCATEL-LUCENT USA INC.
推荐引用方式
GB/T 7714
DONG, PO,CHEN, YOUNG-KAI. Hybrid semiconductor lasers. US10096971. 2018-10-09.
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