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	DFB laser diode having a lateral coupling for large output power
	KOETH, JOHANNES BERNHARD; ZELLER, WOLFGANG
	2014-10-07
著作权人	NANOPLUS GMBH NANOSYSTEMS AND TECHNOLOGIES
专利号	US8855156
国家	美国
文献子类	授权发明
其他题名	DFB laser diode having a lateral coupling for large output power
英文摘要	The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.
公开日期	2014-10-07
申请日期	2010-05-05
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35610]
专题	半导体激光器专利数据库
作者单位	NANOPLUS GMBH NANOSYSTEMS AND TECHNOLOGIES
推荐引用方式 GB/T 7714	KOETH, JOHANNES BERNHARD,ZELLER, WOLFGANG. DFB laser diode having a lateral coupling for large output power. US8855156. 2014-10-07.

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