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	Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
	KIM, KYU-SANG; HA, KYOUNG-HO
	2010-08-10
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US7773649
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
英文摘要	Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.
公开日期	2010-08-10
申请日期	2007-07-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35572]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	KIM, KYU-SANG,HA, KYOUNG-HO. Semiconductor laser diode having wafer-bonded structure and method of fabricating the same. US7773649. 2010-08-10.

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