| Semiconductor light-emitting device | |
| ISHIKAWA, TSUTOMU; KOBAYASHI, HIROHIKO; YAMAMOTO, TSUYOSHI; SHOJI, HAJIME | |
| 2002-07-30 | |
| 著作权人 | FUJITSU LIMITED |
| 专利号 | US6426515 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | In a semiconductor light-emitting device including an MQW diffraction grating structure mainly used in a gain-coupled DFB laser, the ratio of the gain coupling coefficient to the index coupling coefficient is increased by making each well layer in MQW-A thicker than that in MQW-B. Each well layer and each barrier layer in the MQW structure are made of different compositions of GaInAsP. This implements a semiconductor light-emitting device with high wavelength stability, which does not induce any mode hop even during modulation with high output power or even when external optical feedback is present. |
| 公开日期 | 2002-07-30 |
| 申请日期 | 2001-03-30 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35402]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | ISHIKAWA, TSUTOMU,KOBAYASHI, HIROHIKO,YAMAMOTO, TSUYOSHI,et al. Semiconductor light-emitting device. US6426515. 2002-07-30. |
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