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	Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
	HONG, CHANG-HEE; KIM, SUN TAE
	2001-01-23
著作权人	LG ELECTRONICS INC.
专利号	US6177292
国家	美国
文献子类	授权发明
其他题名	Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
英文摘要	Method for forming a single crystal GaN semiconductor substrate and a GaN diode with the substrate is disclosed which forms in a short time period, has a low crystal defect concentration and allows forming a size large enough to fabricate an optical device, the method including either the steps of fast growth of a GaN group material on an oxide substrate to a thickness without cracking and subjecting to mechanical polish to remove a portion of the oxide substrate, and growing GaN again on the grown GaN layer and complete removal of the remaining oxide substrate to obtain a GaN film, or the steps of separating the oxide substrate from the GaN layer utilizing cooling to obtain a GaN film, grown GaN on the GaN film to a predetermined thickness to form a GaN bulk single crystal and mirror polishing it to form the GaN single crystal substrate, whereby a defectless GaN single crystal substrate of a size required for fabrication of an optical device can be obtained within a short time period because fast homoeptaxial growth of a GaN film is allowed.
公开日期	2001-01-23
申请日期	1997-12-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35217]
专题	半导体激光器专利数据库
作者单位	LG ELECTRONICS INC.
推荐引用方式 GB/T 7714	HONG, CHANG-HEE,KIM, SUN TAE. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate. US6177292. 2001-01-23.

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