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	Semiconductor laser device and method of fabricating semiconductor laser device
	KAWANO, MINORU; SAKAINO, GO
	1997-07-01
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5644586
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device and method of fabricating semiconductor laser device
英文摘要	In a semiconductor laser device including a stack of semiconductor laser chips, each semiconductor laser chip includes opposite upper and lower surfaces, an upper electrode disposed on a portion of the upper surface, and a lower electrode disposed on a portion of the lower surface. Two adjacent semiconductor laser chips in the stack are connected such that the lower electrode of an upper laser chip is bonded to the upper electrode of a lower laser chip with solder. Since the upper electrode (lower electrode) is disposed on a portion of the upper surface (lower surface) of each laser chip, i.e., it is not disposed over the entire upper surface (lower surface) of the laser chip, the solder hardly flows over the side surface of the laser chip, so that unwanted short-circuiting between the upper electrode and the lower electrode of the laser chip is avoided. In addition, when solder is molten between two electrodes, the molten solder spreads over the surfaces of the electrodes, and the surface tension of the molten solder draws the electrodes to each other so that the electrodes are automatically aligned with each other. Therefore, in this stacked laser device, since the surface tension of the molten solder functions between the upper electrode and the lower electrode of the adjacent laser chips, automatic alignment is performed between these laser chips.
公开日期	1997-07-01
申请日期	1995-09-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35096]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAWANO, MINORU,SAKAINO, GO. Semiconductor laser device and method of fabricating semiconductor laser device. US5644586. 1997-07-01.

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