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	超短光パルス半導体レーザ装置および波長変換型超短光パルス発生装置
	雄谷 順; 藤田 俊弘
	1995-10-09
著作权人	松下電器産業株式会社
专利号	JP1995093475B2
国家	日本
文献子类	授权发明
其他题名	超短光パルス半導体レーザ装置および波長変換型超短光パルス発生装置
英文摘要	PURPOSE:To obtain short wavelength laser beam pulses having a high output and in a very short time by conducting mode locking by TM mode oscillation and coupling beam pulses with an optical guide type wave-length changing element. CONSTITUTION:Currents are injected to the active layer 10 of a semiconductor laser 16 from a power supply 38. Laser beams 40 emitted from a first end face 14 on which an antireflection film 15 is shaped are passed through a lens 42, a polarizer 44, through which only a TM polarizing component is passed, and an etalon 46 as a wave-length controller, and reflected by an external reflector 22 and fed back to the semiconductor laser 16. When inrush currents are modulated by the round trip frequency f=2L/C (in formula, C represents light velocity and L a distance between the end face 12 of the laser 16 and the reflector 22) of an external resonator, beam pulses 48 for a time (1ps or less) shorter than conventional devices are acquired. It is because the residual reflectivity of the antireflection film 18 is reduced at a TM mode. The beam pulses can be coupled directly with a wave changing element, thus acquiring short wave-length pulses having a high output.
公开日期	1995-10-09
申请日期	1988-11-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34861]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	雄谷 順,藤田 俊弘. 超短光パルス半導体レーザ装置および波長変換型超短光パルス発生装置. JP1995093475B2. 1995-10-09.

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