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	Semiconductor double heterostructure diode laser
	-
	1975-03-05
著作权人	LICENTIA PATENTVERWALTUNGS GMBH
专利号	GB1385818A
国家	英国
文献子类	授权发明
其他题名	Semiconductor double heterostructure diode laser
英文摘要	1385818 Lasers LICENTIA PATENTVERWALTUNGS GmbH 28 July 1972 [29 July 1971] 35500/72 Heading H1C In a double heterojunction semi-conductor laser diode current is restricted to a narrow portion of the laserable region by insulating layers or by depletion layers. A conventional restricted current diode which the invention modifies will first be described. In Fig. 2 a P type material on a heatsink M forms a P-N junction with the upper N type material; the junction is the light emitting region. Two P type regions are formed in the N type material by masking and diffusing, leaving a narrow N type path through which current is passed by electrodes (not shown) at the top and bottom of the device. The depletion layers around these two P type regions restrict the current so that lasing occurs only in the region at the centre of Fig. 2; such an output is suited to fibre optic coupling. The P and N type materials may be reversed, and the heatsink may be at the top of the device, Figs. 3-5 (not shown). In the invention the simple P-N junction may be replaced by a layer a, Fig. 6, of compensatedly doped material having regions of higher band gap, P+ and N+ on either side of it to form a double hetero-structure laser and hence confine emitted radiation to layer a. Again the P and N type materials may be reversed, and heatsink M may be at the top of the device, Figs. 7-9 (not shown). If the P type regions of Fig. 6, which define the current path are grown first, and then the rest of the structure is produced on top of the regions, the final laser is as shown in Fig. 10. Again the materials may be reversed, Fig. 11 (not shown). If the current is to be confined by insulating layers, the structure of Fig. 13 is used; here portions are first etched away and then insulating material F, of lower refractive index than the active material a, is deposited. The remaining space is filled with a material G. In Fig. 13 layers v and ware of higher bandgap than layer a, and may be GaAlAs, while S is a substrate, e.g. of GaAs. Layer d prevents corrosion. The substrate may have depletion layers formed in it as for Figs. 2-11 to further confine the current. The region G may be omitted, but surface insulation with SiO2 is then preferred, Fig. 16 (not shown). In Fig. 14 the region a is restricted in width by the layer w, to further confine the current path between the depletion layers formed in substrate S. The above current restriction may be combined with conventional strip electrodes. The output may be a transverse mode suitable for coupling to an optical fibre.
公开日期	1975-03-05
申请日期	1972-07-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34672]
专题	半导体激光器专利数据库
作者单位	LICENTIA PATENTVERWALTUNGS GMBH
推荐引用方式 GB/T 7714	-. Semiconductor double heterostructure diode laser. GB1385818A. 1975-03-05.

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