Semiconductor device | |
- | |
1972-07-26 | |
著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
专利号 | GB1282708A |
国家 | 英国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor device |
英文摘要 | 1282708 Bulk effect semiconductor circuits INTERNATIONAL BUSINESS MACHINES CORP 11 March 1970 [1 April 1969 (2)] 11549/70 Heading H3T [Also in Division H1] A device 10 exhibiting bulk negative resistance and comprising a semiconductor body whithin which the band-edge energy has a periodic spatial variation the periodicity of which is less than the carrier mean free path but greater than the lattice periodicity (see Division H1) may be included in the circuit illustrated in Fig. 8. The value of the load resistance R L may be chosen to cause the device 10 to operate in an astable oscillatory mode or a bistable switching mode controlled by input signals at a terminal 52. The entire circuit may be formed in a cavity, the inductance L and capacitance C then representing the distributed inductance and capacitance. Fig. 12 shows a pulse operated generator employing a device 10 provided with one ohmic electrode and one rectifying contact. Trigger pulses from a generator 70 are supplied, via choke 72, to the device 10 and the h.f. component of the signal from the device 10 is coupled to output terminals 78. |
公开日期 | 1972-07-26 |
申请日期 | 1970-03-11 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/34665] |
专题 | 半导体激光器专利数据库 |
作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
推荐引用方式 GB/T 7714 | -. Semiconductor device. GB1282708A. 1972-07-26. |
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