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	Semiconductor crystalline device manufacture
	-
	1965-06-16
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	GB995121A
国家	英国
文献子类	授权发明
其他题名	Semiconductor crystalline device manufacture
英文摘要	995,12 Lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Feb. 5, 1964 [Feb. 20, 1963], No. 4815/64. Heading H3B. [Also in Division H1] A method of making a plurality of lasers includes the steps of forming a bar of crystalline semi - conductor material having two parallel cleaved faces and dividing the bar into a plurality of pieces along directions transverse to the cleaved faces. The method is used to produce injection lasers, the process being illustrated in Fig. 4c. A crystal of N-type gallium arsenide doped with selenium is grown, for example by pulling from a melt in the 100 or 111 direction which favours crystalline perfection, and is then cut into wafers. Zinc is diffused into one surface of the wafer to produce a junction and the wafer is then cleaved into bars, the cleaved faces being spaced the desired Fabry-Perot interference distance apart. The bar is then subdivided by sawing, etching or cleaving. A laser formed by this method is shown in Fig. 7, the saw-cuts 41, 42 restricting the active area of the device while leaving the lower part 2 as a heat dissipating surface. Leads 9 and 11 are joined to the faces 8 and 9 of the device and the cleaved faces may be silvered to increase their reflectivity. The edge portions 44 of the device may be removed or may be used for signal input purposes. The diffusion of zinc into the wafer can also be performed after cleaving the wafer into bars, and specially shaped junctions can be formed by masking the surface of the wafer or bar during the diffusion. Alternatively the junction can be formed during the growth of the crystal. A plurality of interacting devices can be formed in a single element by extending the bottom of slots 41 and 42 (Fig. 7) parallel to the major faces of the wafer to undercut the edges of the slots which are then removed by cleaving to produce parallel faces. The whole element is also divided from the bar by cleaving.
公开日期	1965-06-16
申请日期	1964-02-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34649]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	-. Semiconductor crystalline device manufacture. GB995121A. 1965-06-16.

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