QQ客服 官方微博 反馈留言

	Low noise and narrow linewidth external cavity semiconductor laser for coherent frequency and time domain reflectometry
	SU, CHIN B.
	1996-04-23
著作权人	TEXAS A&M UNIVERSITY SYSTEM, THE
专利号	US5511086
国家	美国
文献子类	授权发明
其他题名	Low noise and narrow linewidth external cavity semiconductor laser for coherent frequency and time domain reflectometry
英文摘要	A semiconductor laser (10) having an external cavity used for coherent frequency and time domain reflectometry is provided. The laser (10) provides a very stable single longitudinal mode characteristic, a very narrow lasing linewidth, and a very low noise optical output. The laser (10) includes a semiconductor optical amplifier (14) emitting a coherent light beam from one facet, a phase modulator (22) receiving the coherent light beam and linearly varying an optical frequency of the laser, and an etalon (32) selecting and stabilizing one longitudinal mode of the laser cavity for lasing, narrowing the linewidth and reducing the noise. A computer-controlled and piezoelectric actuated wavelength-selective grating (58) varies the length of the laser cavity and thereby tuning the optical frequency of the selected longitudinal mode to track the transmission frequency of the etalon by maintaining maximum power intensity thereby stabilizing the selected mode. A selected portion of the coherent light beam is directed back to the semiconductor optical amplifier (14) and further amplified. A reference portion of the light beam is coherently mixed with a backscattered signal portion of the light beam to yield reflectometry measurement or detection.
公开日期	1996-04-23
申请日期	1995-03-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34563]
专题	半导体激光器专利数据库
作者单位	TEXAS A&M UNIVERSITY SYSTEM, THE
推荐引用方式 GB/T 7714	SU, CHIN B.. Low noise and narrow linewidth external cavity semiconductor laser for coherent frequency and time domain reflectometry. US5511086. 1996-04-23.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。