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	Testing method of surface-emitting laser device and testing device thereof
	HIRAIWA, KOJI; KAGEYAMA, TAKEO; IWAI, NORIHIRO; TAKAKI, KEISHI
	2012-05-15
著作权人	FURUKAWA ELECTRIC CO., LTD.
专利号	US8178364
国家	美国
文献子类	授权发明
其他题名	Testing method of surface-emitting laser device and testing device thereof
英文摘要	A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
公开日期	2012-05-15
申请日期	2010-06-08
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34521]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	HIRAIWA, KOJI,KAGEYAMA, TAKEO,IWAI, NORIHIRO,et al. Testing method of surface-emitting laser device and testing device thereof. US8178364. 2012-05-15.

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