| Ultraviolet laser apparatus and semiconductor exposure apparatus | |
| OWA, SOICHI; OHTSUKI, TOMOKO | |
| 2000-07-11 | |
| 著作权人 | NIKON CORPORATION |
| 专利号 | US6088379 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ultraviolet laser apparatus and semiconductor exposure apparatus |
| 英文摘要 | An ultraviolet laser apparatus which generates laser light at 193 nm to 213 nm with high temporal and spatial coherence and relatively high power is disclosed. The UV laser apparatus provides a light source for an exposure device for optical lithography and an aberration measurement interferometer that measures lens wave front aberration. The laser apparatus disclosed herein comprises two lasers having laser resonators that are coincident along a portion of their respective optical paths. A nonlinear optical crystal is located along the shared optical path portion for sum frequency generation of the light of the respective lasers. |
| 公开日期 | 2000-07-11 |
| 申请日期 | 1998-06-09 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIKON CORPORATION |
| 推荐引用方式 GB/T 7714 | OWA, SOICHI,OHTSUKI, TOMOKO. Ultraviolet laser apparatus and semiconductor exposure apparatus. US6088379. 2000-07-11. |
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