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	Method of cleaving GaN/sapphire for forming laser mirror facets
	AKKIPEDDI, RAMAM; LI, ZHONGLI; TRIPATHY, SUDHIRANJAN; CHUA, SOO JIN
	2007-04-24
著作权人	AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
专利号	US7208096
国家	美国
文献子类	授权发明
其他题名	Method of cleaving GaN/sapphire for forming laser mirror facets
英文摘要	A laser device has a substrate and at least one GaN-based layer upon a first surface of the substrate, and the laser device is cleaved by cutting linear grooves into a second surface of the substrate such that the grooves are in alignment with vertical planes of the substrate. The substrate and the at least one GaN-based layer are cleaved along the vertical planes. The cutting is performed using a laser beam from an external laser source.
公开日期	2007-04-24
申请日期	2003-06-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/33842]
专题	半导体激光器专利数据库
作者单位	AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
推荐引用方式 GB/T 7714	AKKIPEDDI, RAMAM,LI, ZHONGLI,TRIPATHY, SUDHIRANJAN,et al. Method of cleaving GaN/sapphire for forming laser mirror facets. US7208096. 2007-04-24.

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