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	Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
	VU, DUY-PHACH; DINGLE, BRENDA D.; DINGLE, JASON E.; CHEONG, NGWE
	1996-03-12
著作权人	VU ; DUY-PHACH
专利号	US5499124
国家	美国
文献子类	授权发明
其他题名	Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
英文摘要	The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
公开日期	1996-03-12
申请日期	1995-05-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/33497]
专题	半导体激光器专利数据库
作者单位	1.DUY-PHACH 2.VU
推荐引用方式 GB/T 7714	VU, DUY-PHACH,DINGLE, BRENDA D.,DINGLE, JASON E.,et al. Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material. US5499124. 1996-03-12.

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