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	半導体レーザ装置の製造方法
	藤家 和彦
	1996-12-05
著作权人	ソニー株式会社
专利号	JP2586536B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置の製造方法
英文摘要	PURPOSE:To prevent the interference caused by the reflection on a beam emitting end face without a risk of trouble in laser beam emission, by making the beam reflectance of the beam emitting end face except the optical beam emission point lower than that of said optical beam emission point. CONSTITUTION:The beam reflectance of the beam emitting end face 2 of a semiconductor laser device 1 except the optical beam emission point 5 is lower than that of said optical beam emission point 5. For example, when beam absorptive positive type photoresist film 4a is applied on the surface of the beam emitting end face 2 of the semiconductor laser device 1 and cured, and a beam is emitted from the semiconductor laser device 1 through the optical beam emission point 5 to expose the sensitive resist 4a, the spot just on the optical beam emission point 5 of the sensitive resist 4a is exposed. And then the exposed portion 4b of the sensitive resist 4a is eliminated by etching to bare the optical beam emission point 5. This decreases the beam reflectance of the beam emitting end face 2 except the optical beam emission point 5.
公开日期	1997-03-05
申请日期	1987-12-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/33298]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	藤家 和彦. 半導体レーザ装置の製造方法. JP2586536B2. 1996-12-05.

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