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	Fast axis beam profile shaping for high power laser diode based annealing system
	JENNINGS, DEAN; MAYUR, ABHILASH J.; THOMAS, TIMOTHY N.; PARIHAR, VIJAY; ACHUTHARAMAN, VEDAPURAM S.; THAKUR, RANDHIR P. S.
	2012-10-16
著作权人	APPLIED MATERIALS, INC.
专利号	US8288683
国家	美国
文献子类	授权发明
其他题名	Fast axis beam profile shaping for high power laser diode based annealing system
英文摘要	A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.
公开日期	2012-10-16
申请日期	2008-11-04
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/32747]
专题	半导体激光器专利数据库
作者单位	APPLIED MATERIALS, INC.
推荐引用方式 GB/T 7714	JENNINGS, DEAN,MAYUR, ABHILASH J.,THOMAS, TIMOTHY N.,et al. Fast axis beam profile shaping for high power laser diode based annealing system. US8288683. 2012-10-16.

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