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	Forward block characteristic of a novel RF SOI LDMOS with a buried P-type layer
	Xu S.G.; Zhang H.P.; Wang D.J.; Liu G.H.; Niu X.Y.; Lin M.; Xu L.Y.
	2010
会议名称	2010 IEEE International Silicon on Insulator Conference, SOI 2010
会议地点	San Diego, CA
页码	-
会议录	2010 IEEE International Silicon on Insulator Conference, SOI 2010
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5286630
专题	大连理工大学
作者单位	1.Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, 310018, China 2.Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, 310018, China, School of Electronic and Information, Dalian University of Technology, Dalian, 116024, China 3.School of Electronic and Information, Dalian University of Technology, Dalian, 116024, China
推荐引用方式 GB/T 7714	Xu S.G.,Zhang H.P.,Wang D.J.,et al. Forward block characteristic of a novel RF SOI LDMOS with a buried P-type layer[C]. 见:2010 IEEE International Silicon on Insulator Conference, SOI 2010. San Diego, CA.

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